Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1200
1.7
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.5
2.0
1
4.0
VDS = VGS, ID = 5 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 5 mA, TJ = 150ºC
VDS = 1200 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
90
μA
nA
10
75
VGS = 15 V, ID = 20 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
100
9.0
8.3
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
gfs
S
Fig. 7
V
DS= 20 V, IDS= 20 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
1350
58
Fig. 17,
18
VGS = 0 V, VDS = 1000 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
3
AC
V
= 25 mV
33
μJ
μJ
Fig. 16
EON
Turn-On Switching Energy (Body Diode FWD)
230
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
Fig. 26,
29
RG(ext) =ꢀ0ꢀΩ,ꢀL=ꢀ156ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn-Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
85
17
9
VDD = 800 V, VGS = -4 V/15 V
Rise Time
ID = 20 A, RG(ext)ꢀ=ꢀ0ꢀΩ,ꢀ
Timing relative to VDS
Inductive load
Fig. 27,
28, 29
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
29
10
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
10.5
14
Ω
f = 1 MHz VAC = 25 mV
V
DS = 800 V, VGS = -4 V/15 V
21
ID = 20 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
51
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.5
V
V
VGS = -4 V, ISD = 10 A
VGS = -4 V, ISD = 10 A, T = 150 °C
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.0
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
22.4
A
VGS = -4 V
Note 1
Note 1
80
18
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
ns
VGS = -4 V, ISD = 20 A, VR = 800 V
Note 1,
Fig. 29
Qrr
Irrm
Reverse Recovery Charge
220
19
nC
A
dif/dt = 3600 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
1.1
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
40
2
C3M0075120J Rev. -, 07-2017