Typical Performance
80
-10
-8
-6
-4
-2
0
Conditions:
0
VDS = 20 V
70
60
50
40
30
20
10
0
tp < 200 µs
VGS = -4 V
-10
-20
-30
-40
-50
-60
-70
-80
VGS = 0 V
TJ = 25 °C
TJ = 150 °C
VGS = -2 V
TJ = -55 °C
Conditions:
TJ = -55°C
tp < 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage VDS (V)
Gate-Source Voltage, VGS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
VGS = -4 V
-10
-20
-30
-40
-50
-60
-70
-80
-10
VGS = -4 V
VGS = 0 V
VGS = 0 V
-20
-30
-40
-50
-60
-70
-80
VGS = -2 V
VGS = -2 V
Conditions:
TJ = 25°C
tp < 200 µs
Conditions:
TJ = 150°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
VDS = VGS
IDS = 5 mA
Conditions:
I
DS = 20 A
IGS = 50 mA
V
DS = 800 V
12
8
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0075120J Rev. -, 07-2017