Typical Performance
1.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Conditions:
IDS = 20 A
VDD = 800 V
RG(ext) = 0 Ω
VGS = -4V/+15 V
FWD = C3M0075120D
FWD = (- - - -) C4D10120A
L = 157 μH
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
1.4
ETotal
1.2
ETotal
1.0
EOn
EOn
0.8
0.6
0.4
0.2
0.0
ETotal
EOn
EOff
EOff
EOff
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
120
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -4V/+15 V
FWD = C3M0075120D
L = 157 μH
100
80
60
40
20
0
td(on)
td(off)
tr
tf
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figure 28. Switching Times Definition
C3M0075120D Rev. A, 02-2019
7
CREE [ CREE, INC ]
