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C3M0075120D 参数 Datasheet PDF下载

C3M0075120D图片预览
型号: C3M0075120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3M MOSFET Technology]
分类和应用:
文件页数/大小: 10 页 / 877 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
VGS = 0 V  
VGS = 0 V  
VGS = 5 V  
VGS = 5 V  
VGS = 10 V  
VGS = 10 V  
VGS = 15 V  
VGS = 15 V  
Conditions:  
TJ = -55 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
Drain-Source Voltage VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 13. 3rd Quadrant Characteristic at -55 ºC  
Figure 14. 3rd Quadrant Characteristic at 25 ºC  
40  
35  
30  
25  
20  
15  
10  
5
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
0
V
GS = 0 V  
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
VGS = 5 V  
VGS = 10 V  
VGS = 15 V  
Conditions:  
TJ = 150 °C  
tp < 200 µs  
0
0
200  
400  
600  
800  
1000  
Drain to Source Voltage, VDS (V)  
Drain-Source Voltage VDS (V)  
Figure 15. 3rd Quadrant Characteristic at 150 ºC  
Figure 16. Output Capacitor Stored Energy  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
f = 1 MHz  
Conditions:  
TJ = 25 °C  
V
AC = 25 mV  
10000  
10000  
1000  
100  
10  
f = 1 MHz  
Ciss  
Ciss  
1000  
100  
10  
Coss  
Coss  
Crss  
Crss  
1
1
0
50  
100  
Drain-Source Voltage, VDS (V)  
150  
200  
0
200  
400  
600  
800  
1000  
Drain-Source Voltage, VDS (V)  
Figure 17. Capacitances vs. Drain-Source  
Voltage (0 - 200V)  
Figure 18. Capacitances vs. Drain-Source  
Voltage (0 - 1000V)  
C3M0075120D Rev. A, 02-2019  
5