Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.7
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, ID = 100 μA
2.5
2.0
1
4.0
VDS = VGS, ID = 5 mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 5 mA, TJ = 150ºC
VDS = 1200 V, VGS = 0 V
VGS = 15 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
90
μA
nA
10
75
VGS = 15 V, ID = 20 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
105
9.0
8.3
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
gfs
S
Fig. 7
VDS= 20 V, IDS= 20 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
1350
58
Fig. 17,
18
VGS = 0 V, VDS = 1000 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
3
AC
V
= 25 mV
35
μJ
μJ
Fig. 16
EON
EOFF
EON
Turn-On Switching Energy (SiC Diode FWD)
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
564
186
924
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
Fig. 26,
29
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
VDS = 800 V, VGS = -4 V/15 V, ID = 20A,
Fig. 26,
29
μJ
RG(ext) = 0Ω, L= 157 μH, TJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
162
56
VDD = 800 V, VGS = -4 V/15 V
ID = 20 A, RG(ext) = 0 Ω,
Timing relative to VDS
Inductive load
Rise Time
17
Fig. 27,
28
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
32
13
,
RG(int)
Qgs
Qgd
Qg
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
10.5
17
Ω
f = 1 MHz VAC = 25 mV
VDS = 800 V, VGS = -4 V/15 V
ID = 20 A
20
nC
Fig. 12
Per IEC60747-8-4 pg 21
54
(T = 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.1
V
V
VGS = -4 V, ISD = 10 A
Fig. 8,
9, 10
VSD
Diode Forward Voltage
3.75
VGS = -4 V, ISD = 10 A, T = 150 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
25.3
A
Note 1
Note 1
VGS = -4 V, T = 25 ˚C
J
80
48
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
ns
VGS = -4 V, ISD = 20 A, VR = 800 V
Note 1
Qrr
Irrm
Reverse Recovery Charge
279
9
nC
A
dif/dt = 2800 A/µs, T = 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Typ.
Symbol
RθJC
Parameter
Max.
1.1
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
0.97
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
40
C3M0075120D Rev. A, 02-2019
2
CREE [ CREE, INC ]
