Typical Performance
1200
600
500
400
300
200
100
0
Conditions:
DS = 20 A
Conditions:
TJ = 25 °C
I
V
R
V
DD = 400 V
G(ext) = 2.5 Ω
GS = -4V/+15 V
V
I
V
DD = 400 V
DS = 20 A
GS = -4V/+15 V
1000
800
600
400
200
0
ETotal
FWD = C3D10060A
L = 77 μH
FWD = C3D10060A
L = 77 μH
ETotal
EOn
EOn
EOff
EOff
50
0
5
10
15
20
25
-50
-25
0
25
75
100
125
150
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
140
Conditions:
TJ = 25 °C
120
100
80
60
40
20
0
V
DD = 400 V
DS = 20 A
GS = -4V/+15 V
I
td (off)
V
tf
tr
td (on)
0
5
10
15
20
25
External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
7
C3M0065090D Rev. -
CREE [ CREE, INC ]
