Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
900
1.8
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.1
1.6
1
VDS = 10V, ID = 5 mA
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = 10V, ID = 5 mA, TJ = 150ºC
VDS = 900 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
78
μA
10
nA
VGS = 15 V, VDS = 0 V
65
VGS = 15 V, ID = 20 A
Fig. 4,
5, 6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
90
VGS = 15 V, ID = 20A, TJ = 150ºC
VDS= 15 V, IDS= 20 A
13.6
11.6
gfs
S
Fig. 7
VDS= 15 V, IDS= 20 A, TJ = 150ºC
Ciss
Coss
Crss
Eoss
Input Capacitance
660
60
Fig. 17,
18
VGS = 0 V, VDS = 600 V
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
pF
f = 1 MHz
4.0
16
AC
V
= 25 mV
μJ
μJ
Fig. 16
Fig. 26
EON
Turn-On Switching Energy
225
VDS = 400 V, VGS = -4 V/15 V, ID = 20A,
RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ77ꢀμH,ꢀꢀTJ = 150ºC
EOFF
td(on)
tr
Turn Off Switching Energy
Turn-On Delay Time
Rise Time
91
21
36
VDD = 400 V, VGS = -4 V/15 V
ID = 20 A, RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
Timing relative to VDS
Per IEC60747-8-4 pg 83
Resistive load
ns
Fig. 27
td(off)
tf
Turn-Off Delay Time
Fall Time
28
25
,
RG(int)
Qgs
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
4.7
7.5
Ω
f = 1 MHz VAC = 25 mV
VDS = 400 V, VGS = -4 V/15 V
ID = 20 A
Per IEC60747-8-4 pg 21
Qgd
Qg
12
nC
Fig. 12
30.4
(T ꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.8
V
V
VGS = -4 V, ISD = 10 A
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.4
30
VGS = -4 V, ISD = 10 A, TJ = 150 °C
VGS = -4 V
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
21
90
A
Note 1
Note 1
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
ns
VGS = -4 V, ISD = 20 A, VR = 400 V
dif/dt = 600 A/µs
Note 1
Qrr
Reverse Recovery Charge
134
7.5
nC
A
Irrm
Peak Reverse Recovery Current
Note (1): When using SiC Body Diode the maximum recommended VGS = -4V
Thermal Characteristics
Symbol
RθJC
Parameter
Max.
1.0
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
Thermal Resistance From Junction to Ambient
°C/W
Fig. 21
RθJA
40
2
C3M0065090D Rev. -
CREE [ CREE, INC ]
