Typical Performance
50
-10
-8
-6
-4
-2
0
Conditions:
VDS = 20 V
tp < 200 µs
0
40
30
20
10
0
VGS = -4 V
TJ = 150 °C
VGS = 0 V
-20
-40
-60
-80
TJ = 25 °C
VGS = -2 V
TJ = -55 °C
Conditions:
TJ = -55°C
tp < 200 µs
0
2
4
6
8
10
Gate-SourceVoltage, VGS (V)
Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
VGS = -4 V
VGS = -4 V
VGS = 0 V
-20
-40
-60
-80
-20
-40
-60
-80
VGS = 0 V
VGS = -2 V
VGS = -2 V
Conditions:
TJ = 150°C
tp < 200 µs
Conditions:
TJ = 25°C
tp < 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.0
16
Conditons
DS = 10 V
DS = 5 mA
Conditions:
V
I
I
I
V
DS = 20 A
GS = 100 mA
DS = 400 V
2.5
2.0
1.5
1.0
0.5
0.0
12
8
TJ = 25 °C
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
35
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0065090D Rev. -