Typical Performance
16
16
14
12
10
8
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 75 A
VGS = -4V/+15 V
FWD = C3M0016120D
L = 65.7 μH
Conditions:
IDS = 75 A
VDD = 800 V
RG(ext) = 5 Ω
VGS = -4V/+15 V
L = 65.7 μH
FWD = C3M0016120D
FWD = C4D20120A
14
ETotal
12
ETotal
10
EOn
EOn
ETotal with diode
8
6
4
2
0
6
EOn with diode
EOff with diode
EOff
4
EOff
2
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
200
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
300
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 75 A
VGS = -4V/+15 V
FWD = C3M0016120D
250
200
150
100
50
td(on)
td(off)
tr
tf
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figure 28. Switching Times Definition
8
C3M0016120D Rev. -, 08-2019
CREE [ CREE, INC ]
