(T = 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
4.6
Max.
Unit
Test Conditions
Note
V
VGS = -4 V, ISD = 37.5 A, T = 25 °C
J
Fig. 8,
9, 10
VSD
Diode Forward Voltage
4.2
V
A
VGS = -4 V, ISD = 37.5 A, T = 175 °C
J
IS
IS, pulse
trr
Continuous Diode Forward Current
Diode pulse Current
112
250
Note 1
Note 1
VGS = -4 V, TC = 25˚C
A
VGS = -4 V, pulse width tP limited by Tjmax
Reverse Recover time
96
604
15
ns
nC
A
VGS = -4 V, ISD = 75 A, VR = 800 V
Qrr
Reverse Recovery Charge
Peak Reverse Recovery Current
Reverse Recover time
Note 1
Note 1
dif/dt = 900 A/µs, T = 175 °C
J
Irrm
trr
58
ns
VGS = -4 V, ISD = 75 A, VR = 800 V
Qrr
Irrm
Reverse Recovery Charge
672
22
nC
A
dif/dt = 1400 A/µs, T = 175 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
RθJC
Parameter
Typ.
0.27
40
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
RθJA
Thermal Resistance From Junction to Ambient
3
C3M0016120D Rev. -, 08-2019
CREE [ CREE, INC ]
