欢迎访问ic37.com |
会员登录 免费注册
发布采购

C3M0016120D 参数 Datasheet PDF下载

C3M0016120D图片预览
型号: C3M0016120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 933 K
品牌: CREE [ CREE, INC ]
 浏览型号C3M0016120D的Datasheet PDF文件第1页浏览型号C3M0016120D的Datasheet PDF文件第2页浏览型号C3M0016120D的Datasheet PDF文件第4页浏览型号C3M0016120D的Datasheet PDF文件第5页浏览型号C3M0016120D的Datasheet PDF文件第6页浏览型号C3M0016120D的Datasheet PDF文件第7页浏览型号C3M0016120D的Datasheet PDF文件第8页浏览型号C3M0016120D的Datasheet PDF文件第9页  
(T = 25˚C unless otherwise specified)  
Reverse Diode Characteristics  
C
Symbol  
Parameter  
Typ.  
4.6  
Max.  
Unit  
Test Conditions  
Note  
V
VGS = -4 V, ISD = 37.5 A, T = 25 °C  
J
Fig. 8,  
9, 10  
VSD  
Diode Forward Voltage  
4.2  
V
A
VGS = -4 V, ISD = 37.5 A, T = 175 °C  
J
IS  
IS, pulse  
trr  
Continuous Diode Forward Current  
Diode pulse Current  
112  
250  
Note 1  
Note 1  
VGS = -4 V, TC = 25˚C  
A
VGS = -4 V, pulse width tP limited by Tjmax  
Reverse Recover time  
96  
604  
15  
ns  
nC  
A
VGS = -4 V, ISD = 75 A, VR = 800 V  
Qrr  
Reverse Recovery Charge  
Peak Reverse Recovery Current  
Reverse Recover time  
Note 1  
Note 1  
dif/dt = 900 A/µs, T = 175 °C  
J
Irrm  
trr  
58  
ns  
VGS = -4 V, ISD = 75 A, VR = 800 V  
Qrr  
Irrm  
Reverse Recovery Charge  
672  
22  
nC  
A
dif/dt = 1400 A/µs, T = 175 °C  
J
Peak Reverse Recovery Current  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
Typ.  
0.27  
40  
Unit  
Test Conditions  
Note  
Thermal Resistance from Junction to Case  
°C/W  
Fig. 21  
RθJA  
Thermal Resistance From Junction to Ambient  
3
C3M0016120D Rev. -, 08-2019