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C3M0016120D 参数 Datasheet PDF下载

C3M0016120D图片预览
型号: C3M0016120D
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET C3MTM MOSFET Technology]
分类和应用:
文件页数/大小: 11 页 / 933 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
120  
600  
500  
400  
300  
200  
100  
0
Conditions:  
TJ ≤ 175 °C  
Conditions:  
TJ ≤ 175 °C  
100  
80  
60  
40  
20  
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
170  
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
170  
Case Temperature, TC (°C)  
Case Temperature, TC (°C)  
Figure 19. Continuous Drain Current Derating vs.  
Case Temperature  
Figure 20. Maximum Power Dissipation Derating vs.  
Case Temperature  
1
100.00  
Limited by RDS On  
10 µs  
100 µs  
1 ms  
0.5  
0.3  
10.00  
100 ms  
100E-3  
0.1  
1.00  
0.10  
0.01  
0.05  
0.02  
0.01  
10E-3  
1E-3  
Conditions:  
TC = 25 °C  
D = 0,  
SinglePulse  
Parameter: tp  
0.1  
1
10  
100  
1000  
1E-6  
10E-6  
100E-6  
1E-3  
Time, tp (s)  
10E-3  
100E-3  
1
Drain-Source Voltage, VDS (V)  
Figure 21. Transient Thermal Impedance  
(Junction - Case)  
Figure 22. Safe Operating Area  
15  
12  
10  
8
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
VDD = 600 V  
RG(ext) = 5 Ω  
VGS = -4V/+15V  
FWD = C3M0016120D  
L = 65.7 μH  
ETotal  
ETotal  
VDD = 800 V  
RG(ext) = 5 Ω  
VGS = -4V/+15V  
FWD = C3M0016120D  
L = 65.7 μH  
10  
5
EOn  
EOn  
6
4
EOff  
EOff  
2
0
0
0
20  
40  
60  
80  
100  
120  
0
20  
40  
60  
80  
100  
120  
Drain to Source Current, IDS (A)  
Drain to Source Current, IDS (A)  
Figure 23. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 600V)  
Figure 24. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 800V)  
7
C3M0016120D Rev. -, 08-2019