Typical Performance
100
70
60
50
40
30
20
10
0
Conditions:
DS = 2 A
Conditions:
TJ = 25 °C
I
90
V
R
V
DD = 1200 V
G(ext) = 2.5 Ω
GS = -5V/+20 V
VDD = 1200 V
I
V
DS = 2 A
GS = -5V/+20 V
80
70
60
50
40
30
20
10
0
ETotal
FWD = C2M1000170J
L = 1368 μH
FWD = C2M1000170J
L = 1368 μH
ETotal
EOn
EOn
EOff
EOff
30
0
5
10
15
20
25
35
40
45
-50
-25
0
25
50
75
100
125
150
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
45
Conditions:
TJ = 25 °C
40
35
30
25
20
15
10
5
tf
V
DD = 1200 V
RL = 600 Ω
GS = -5V/+20 V
V
td (off)
tr
td (on)
0
0
10
20
30
40
50
External Gate Resistor, RG(ext) (Ohms)
Figure 27. Switching Times vs. RG(ext)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
C2M1000170J Rev. A, 10-2015
7
CREE [ CREE, INC ]
