欢迎访问ic37.com |
会员登录 免费注册
发布采购

C2M1000170J 参数 Datasheet PDF下载

C2M1000170J图片预览
型号: C2M1000170J
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 10 页 / 1299 K
品牌: CREE [ CREE, INC ]
 浏览型号C2M1000170J的Datasheet PDF文件第1页浏览型号C2M1000170J的Datasheet PDF文件第2页浏览型号C2M1000170J的Datasheet PDF文件第3页浏览型号C2M1000170J的Datasheet PDF文件第4页浏览型号C2M1000170J的Datasheet PDF文件第6页浏览型号C2M1000170J的Datasheet PDF文件第7页浏览型号C2M1000170J的Datasheet PDF文件第8页浏览型号C2M1000170J的Datasheet PDF文件第9页  
Typical Performance  
-5  
-4  
-3  
VGS = 0 V  
-2  
-1  
0
-5  
-4  
-3  
-2  
-1  
0
0
0
Conditions:  
TJ = -55 °C  
tp < 200 µs  
Conditions:  
TJ = 25 °C  
tp < 200 µs  
VGS = 0 V  
VGS = 5 V  
VGS = 5 V  
-1  
-2  
-3  
-4  
-5  
-1  
-2  
-3  
-4  
-5  
VGS = 10 V  
VGS = 10 V  
VGS = 15 V  
V
GS = 15 V  
VGS = 20 V  
VGS = 20 V  
Drain-Source Voltage, VDS (V)  
Drain-Source Voltage, VDS (V)  
Figure 13. 3rd Quadrant Characteristic at -55 ºC  
Figure 14. 3rd Quadrant Characteristic at 25 ºC  
-5  
-4  
-3  
-2  
-1  
0
8
7
6
5
4
3
2
1
0
0
Conditions:  
TJ = 150 °C  
tp < 200 µs  
VGS = 0 V  
VGS = 5 V  
-1  
-2  
-3  
-4  
-5  
VGS = 10 V  
VGS = 15 V  
VGS = 20 V  
0
200  
400  
600  
800  
1000  
1200  
Drain-Source Voltage, VDS (V)  
Drain to Source Voltage, VDS (V)  
Figure 15. 3rd Quadrant Characteristic at 150 ºC  
Figure 16. Output Capacitor Stored Energy  
1000  
1000  
100  
10  
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
VAC = 25 mV  
VAC = 25 mV  
f = 1 MHz  
Ciss  
Ciss  
f = 1 MHz  
100  
10  
1
Coss  
Coss  
Crss  
Crss  
1
0
50  
100  
Drain-Source Voltage, VDS (V)  
150  
200  
0
200  
400  
600  
800  
1000  
Drain-Source Voltage, VDS (V)  
Figure 18. Capacitances vs. Drain-Source  
Voltage (0-1000 V)  
Figure 17. Capacitances vs. Drain-Source  
Voltage (0-200 V)  
C2M1000170J Rev. A, 10-2015  
5