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C2M1000170J 参数 Datasheet PDF下载

C2M1000170J图片预览
型号: C2M1000170J
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide Power MOSFET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 10 页 / 1299 K
品牌: CREE [ CREE, INC ]
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Typical Performance  
6
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Conditions:  
TJ ≤ 150 °C  
Conditions:  
TJ ≤ 150 °C  
5
4
3
2
1
0
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
-55  
-30  
-5  
20  
45  
70  
95  
120  
145  
Case Temperature, TC (°C)  
Case Temperature, TC (°C)  
Figure 19. Continuous Drain Current Derating vs.  
Case Temperature  
Figure 20. Maximum Power Dissipation Derating vs.  
Case Temperature  
10.00  
0.5  
0.3  
1
100E-3  
10E-3  
1E-3  
10 µs  
Limited by RDS On  
100 µs  
1 ms  
1.00  
0.10  
0.01  
0.1  
100 ms  
0.05  
0.02  
SinglePulse  
0.01  
Conditions:  
TC = 25 °C  
D = 0,  
Parameter: tp  
0.1  
1
10  
100  
1000  
1E-6  
10E-6  
100E-6  
1E-3  
Time, tp (s)  
10E-3  
100E-3  
1
Drain-Source Voltage, VDS (V)  
Figure 21. Transient Thermal Impedance  
(Junction - Case)  
Figure 22. Safe Operating Area  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Conditions:  
TJ = 25 °C  
Conditions:  
TJ = 25 °C  
V
R
V
DD = 1200 V  
G(ext) = 2.5 Ω  
GS = -5V/+20 V  
V
R
V
DD = 900 V  
G(ext) = 2.5 Ω  
GS = -5V/+20 V  
FWD = C2M1000170J  
L = 1368 μH  
FWD = C2M1000170J  
L = 1368 μH  
ETotal  
ETotal  
EOn  
EOn  
EOff  
EOff  
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Drain to Source Current,IDS (A)  
Drain to Source Current,IDS (A)  
Figure 23. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 1200 V)  
Figure 24. Clamped Inductive Switching Energy vs.  
Drain Current (VDD = 900 V)  
C2M1000170J Rev. A, 10-2015  
6