Typical Performance
3.5
2.5
2.0
1.5
1.0
0.5
0.0
Conditions:
TJ = 25 °C
Conditions:
DS = 40 A
I
V
DD = 800 V
DS = 40 A
GS = -5/+20 V
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
R
V
DD = 800 V
G(ext) = 2.5 Ω
GS = -5/+20 V
I
V
ETotal
FWD = C4D20120A
L = 80 μH
FWD = C4D20120A
L = 80 µH
ETotal
EOn
EOn
EOff
EOff
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Junction Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
100
Conditions:
TJ = 25 °C
DD = 800 V
RL = 20 Ω
GS = -5/+20 V
90
80
70
60
50
40
30
20
10
0
V
V
tr
tf
td (off)
td (on)
0
4
8
12
16
20
External Gate Resistor, RG(ext) (Ohms)
Figure 27. Resistive Switching Times vs. External Gate
Resistor (VDD = 800V, ID = 40A)
Figure 28. Resistive Switching Time Description
7
C2M0040120D Rev -
CREE [ CREE, INC ]
