Typical Performance
60
-6
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
50
VGS = 0 V
TJ = 150 °C
-20
-40
-60
-80
-100
40
30
20
10
0
VGS = -2 V
TJ = 25 °C
TJ = -55 °C
0
2
4
6
8
10
12
14
Gate-SourceVoltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Typical Transfer Characteristic
For Various Temperatures
Figure 8. Typical Body Diode Characteristic
TJ = -55 ºC
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
0
Condition:
TJ = 150 °C
tp < 200 µs
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
VGS = -5 V
VGS = 0 V
VGS = 0 V
VGS = -2 V
-20
-40
-60
-80
-100
-20
-40
-60
-80
VGS = -2 V
-100
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Typical Body Diode Characteristic
TJ = 25 ºC
Figure 10. Typical Body Diode Characteristic
TJ = 150 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
Conditions
DS = 10 V
DS = 100.5mmAA
Conditions:
V
I
I
I
DS = 40 A
GS = 100 mA
20
15
10
5
VDS = 800 V
TJ = 25 °C
Typ
Min
0
-5
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Typical and Minimum Threshold Voltage vs.
Temperature
Figure 12. Typical Gate Charge Characteristic 25 ºC
4
C2M0040120D Rev -
CREE [ CREE, INC ]
