Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1200
2.4
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
V
V
VGS = 0 V, IDꢀ=ꢀ50ꢀμA
2.8
2.0
1
VDS = 10 V, ID = 10mA
VGS(th)
Gate Threshold Voltage
Fig. 11
1.8
VDS = 10 V, ID = 10mA,TJ = 150 °C
VDS = 1200 V, VGS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
52
μA
nA
VGS = 20 V, VDS = 0 V
40
84
VGS = 20 V, ID = 40 A
Fig.
4,5,6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
100
VGS = 20 V, ID = 40 A, TJ = 150 °C
VDS= 20 V, IDS= 40 A
15.1
13.2
gfs
S
Fig. 7
VDS= 20 V, IDS= 40 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
td(on)
tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Coss Stored Energy
Turn-On Delay Time
Rise Time
1893
150
10
VGS = 0 V
Fig.
17,18
pF
VDS = 1000 V
f = 1 MHz
AC
V
= 25 mV
82
μJ
Fig 16
14.8
52
VDD = 800 V, VGS = -5/20 V
ID = 40 A,
RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀꢀRLꢀ=ꢀ16ꢀΩ
Timing relative to VDS
Per IEC60747-8-4 pg 83
ns
Fig. 27
td(off)
Turn-Off Delay Time
26.4
tf
Fall Time
34.4
1.0
0.4
1.8
EON
EOFF
RG
Turn-On Switching Loss
Turn Off Switching Loss
Internal Gate Resistance
VDS = 800 V, VGS = -5/20 V,
mJ
Fig. 25
ID = 40A, RG(ext) =ꢀ2.5Ω,ꢀL=ꢀ80ꢀμH
,
Ω
f = 1 MHz VAC = 25 mV, ESR of CISS
Built-in SiC Body Diode Characteristics
Symbol Parameter
Typ.
3.6
3.3
54
Max.
Unit
Test Conditions
Note
V
V
VGS = - 5 V, ISD = 20 A, TJ = 25 °C
VGS = - 5 V, ISD = 20 A, TJ = 150 °C
VSD
Diode Forward Voltage
Note 1
trr
Reverse Recover time
ns
nC
A
VGS = - 5 V, ISD = 40 A TJ = 25 °C
VR = 800 V
dif/dt = 1000 A/µs
Qrr
Irrm
Reverse Recovery Charge
Peak Reverse Recovery Current
283
15
Note 1
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
RθJC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
0.34
0.38
40
Fig. 21
°C/W
Gate Charge Characteristics
Symbol Parameter
Typ.
Max.
Unit
Test Conditions
Note
Qgs
Qgd
Qg
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
28
37
VDS = 800 V, VGS = -5/20 V
ID = 40 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
115
2
C2M0040120D Rev -
CREE [ CREE, INC ]
