Typical Performance
5
4
3.5
3
Conditions:
DS = 50 A
Conditions:
I
4.5
4
TJ = 25 °C
DD = 800 V
DS = 50 A
GS = -5/+20 V
V
R
V
DD = 800 V
G(ext) = 6.8 Ω
GS = -5/+20 V
V
ETotal
I
V
FWD = C4D20120A
L = 412 µH
FWD = C4D20120A
L = 412 μH
3.5
3
ETotal
2.5
2
EOn
2.5
2
EOn
EOff
1.5
1
1.5
1
EOff
0.5
0
0.5
0
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
90
Conditions:
TJ = 25 °C
80
70
60
50
40
30
20
10
0
V
R
V
DD = 800 V
L = 16 Ω
GS = -5/+20 V
td (off)
tf
tr
td (on)
0
4
8
12
16
20
External Gate Resistor, RG(ext) (Ohms)
Figureꢀ28.ꢀSwitchingꢀTimesꢀDefinition
Figure 27. Switching Times vs. RG(ext)ꢀ
120
100
80
60
40
20
0
Conditons:
DD = 50 V
V
0
25
50
75
100
125
150
175
200
Time in Avalanche TAV (us)
Figure 29. Single Avalanche SOA curve
7
C2M0025120D Rev. B, 10-2015
CREE [ CREE, INC ]
