Typical Performance
100
-5
-4
-3
-2
-1
0
Conditions:
VDS = 20 V
tp < 200 µs
0
Condition:
TJ = -55 °C
VGS = -5 V
80
60
tp < 200 µs
VGS = 0 V
-20
-40
-60
-80
-100
TJ = 150 °C
TJ = 25 °C
VGS = -2 V
40
20
0
TJ = -55 °C
0
2
4
6
8
10
12
14
Gate-SourceVoltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic For
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-5
-4
-3
-2
-1
0
-5
-4
-3
-2
-1
0
0
0
Condition:
TJ = 150 °C
Condition:
TJ = 25 °C
VGS = -5 V
VGS = -5 V
tp < 200 µs
tp < 200 µs
VGS = 0 V
-20
-40
-60
-80
-100
-20
-40
-60
-80
VGS = 0 V
VGS = -2 V
VGS = -2 V
-100
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
CCoonnddititoionnss
VV ==V10 V
IDISD=S =105.m5 mA A
Conditions:
DSDS
GS
I
I
DS = 50 A
GS = 100 mA
20
15
10
5
VDS = 800 V
TJ = 25 °C
0
-5
-50
-25
0
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
180
Junction Temperature TJ (°C)
Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristic
4
C2M0025120D Rev. B, 10-2015
CREE [ CREE, INC ]
