Electrical Characteristics (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)
Symbol
Parameter
Min.
1200
2.0
Typ.
Max. Unit
Test Conditions
Note
V(BR)DSS
Drain-Source Breakdown Voltage
V
VGS = 0 V, IDꢀ=ꢀ100ꢀμA
2.6
2.1
2
4
VDS = VGS, ID = 15mA
V
V
VGS(th)
Gate Threshold Voltage
Fig. 11
VDS = VGS, ID = 15mA, TJ = 150 °C
VDS = 1200 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
600
34
μA
nA
25
43
VGS = 20 V, ID = 50 A
Fig.
4,5,6
RDS(on)
Drain-Source On-State Resistance
Transconductance
mΩ
VGS = 20 V, ID = 50 A, TJ = 150 °C
VDS= 20 V, IDS= 50 A
23.6
21.7
gfs
S
Fig. 7
VDS= 20 V, IDS= 50 A, TJ = 150 °C
Ciss
Coss
Crss
Eoss
EAS
EON
EOFF
td(on)
tr
Input Capacitance
2788
220
15
VGS = 0 V
Fig.
17,18
Output Capacitance
pF
VDS = 1000 V
Reverse Transfer Capacitance
Coss Stored Energy
f = 1 MHz
AC
V
= 25 mV
121
3.5
1.4
0.3
14
μJ
Fig 16
Fig. 29
Avalanche Energy, Single Pluse
Turn-On Switching Energy
Turn Off Switching Energy
Turn-On Delay Time
J
ID = 50A, VDD = 50V
VDS = 800 V, VGS = -5/20 V,
mJ
ns
Fig. 25
ID = 50A, RG(ext)ꢀ=ꢀ2.5Ω,L=ꢀ412ꢀμH
VDD = 800 V, VGS = -5/20 V
ID = 50 A,
RG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀꢀRLꢀ=ꢀ16ꢀΩ
Timing relative to VDS
Per IEC60747-8-4 pg 83
Rise Time
32
Fig. 27
td(off)
Turn-Off Delay Time
29
tf
RG(int)
Qgs
Qgd
Qg
Fall Time
28
1.1
46
,
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
Ω
f = 1 MHz VAC = 25 mV, ESR of CISS
VDS = 800 V, VGS = -5/20 V
ID = 50 A
50
nC
Fig. 12
Per IEC60747-8-4 pg 83
161
Reverse Diode Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
3.3
3.1
V
V
VGS = - 5 V, ISD = 25 A
Fig. 8, 9,
10
VSD
Diode Forward Voltage
VGS = - 5 V, ISD = 25 A, T = 150 °C
J
IS
trr
Continuous Diode Forward Current
Reverse Recovery Time
90
TC= 25 °C
Note 1
45
ns
nC
A
VGS = - 5 V, ISD = 50 A ,T = 25 °C
VR = 800 V
dif/dt = 1000 A/µs
J
Qrr
Irrm
Reverse Recovery Charge
406
13.5
Note 1
Peak Reverse Recovery Current
Noteꢀ(1):ꢀWhenꢀusingꢀSiCꢀBodyꢀDiodeꢀtheꢀmaximumꢀrecommendedꢀVGS = -5V
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
RθJC
RθJC
Thermal Resistance from Junction to Case
Thermal Resistance from Junction to Ambient
0.24
0.27
40
Fig. 21
°C/W
2
C2M0025120D Rev. B, 10-2015
CREE [ CREE, INC ]
