Electrical Characteristics: -40˚C < TA < 85˚C; -40˚C < TJ < 125˚C; 3V < VC < 15V; 4.7V < VCC < 15V; Rt=12K, Ct=390pF
Unless otherwise stated.
PARAMETER
ꢀ Oscillator
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Frequency Accuracy
Voltage Stability
260
273
1
320
2
kHz
%
Temperature Stability
(Note 1) -40˚C < TJ < 125˚C
8
%
Max Frequency
Duty Cycle
(Note 1)
1
MHz
%
80
85
90
Peak Voltage
(Note 1)
(Note 1)
1.94
0.90
0.85
0.85
2.00
0.95
1.00
1.00
2.06
1.00
1.15
1.15
V
Valley Clamp Voltage
Valley Voltage
Discharge Current
V
V
mA
ꢀ Synchronization
Input Threshold
0.9
200
2.1
35
1.4
320
2.5
70
1.8
V
Output Pulse Width
Output High Voltage
Input Resistance
450
2.8
ns
V
100µA Load
140
180
kΩ
ns
SYNC to Drive Delay
Time from SYNC to
GATE Shutdown
100
140
Output Drive Current
R
SYNC = 1Ω
1.00
1.50
2.25
mA
ꢀ GATE Driver
High Saturation Voltage
VC-GATE, VC = 10V,
ISOURCE = 200mA
1.5
1.2
2.0
1.5
V
V
Low Saturation Voltage
GATE-PGnd, ISINK = 200mA
High Voltage Clamp
Output Current
11.0
13.5
1
16.0
1.25
50
V
1 nF load (Note 1)
GATE = 0V
A
Output UVL Leakage
1
µA
Rise Time
Fall Time
1nF load, VC = 20V, 1V < GATE < 9V
1nF load, VC = 20V, 9V < GATE < 1V
60
25
.7
100
50
ns
ns
V
Max Gate Voltage
during UVL/Sleep
I
GATE = 500µA
.4
1.0
ꢀ FeedForward (FF)
Discharge Voltage
I
FF = 2mA
0.3
0.7
V
Discharge Current
FF to GATE Delay
FF = 1V
2
16
75
30
mA
ns
50
125
4
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
