CEP62A3/CEB62A3
1.15
1.30
ID=250ijA
V
DS=VGS
1.20
1.10
I
D
=250ijA
4
1.10
1.00
0.90
1.05
1.00
0.95
0.90
0.85
0.80
0.70
0.60
-50 -25
0
25 50 75 100 125 150
-50 -25
0
25 50
75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
50
40
30
50
10
20
10
1.0
0.1
V
DS=10V
40
0
10
0
20
30
1.2
0.4
0.6
0.8
1.0
1.4
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
DS=15V
I
D=30A
100
8
6
t
i
2
1
0
m
ijs
Li
10
10
10
N)
O
RDS(
4
TC=25 C
Tj=175 C
Single Pulse
2
0
-1
10
2
0
1
-1
10
10
10
10
40
30
0
10
20
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Figure 9. Gate Charge
Operating Area
4-180
CET [ CHINO-EXCEL TECHNOLOGY ]
