CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
4
Typ Max
Parameter
Condition
Min
Unit
Symbol
OFF CHARACTERISTICS
V
GS = 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
30
V
BVDSS
µA
nA
I
DSS
GSS
V
DS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
1
VGS
=
20V, VDS = 0V
Ć
I
100
Ć
ON CHARACTERISTICSa
V
GS(th)
1
3
10
15
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
mΩ
mΩ
8.5
12
V
V
V
V
GS = 10V, I
D
= 26A
RDS(ON)
Drain-Source On-State Resistance
GS = 4.5V, I = 21A
D
60
GS = 10V, VDS = 5V
On-State Drain Current
I
D(ON)
A
S
gFS
36
Forward Transconductance
DS = 10V, I = 26A
D
DYNAMIC CHARACTERISTICSb
1100
600
Input Capacitance
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
180
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSb
19
36
97
68
35
6
48
72
Turn-On Delay Time
t
D(ON)
ns
ns
V
DD = 15V,
=60A,
I
V
D
Rise Time
t
r
GEN = 10V
175
Turn-Off Delay Time
Fall Time
t
D(OFF)
ns
ns
R
G
=24Ω
t
f
135
42
nC
Q
g
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
DS =15V
GS =10V
,
I = 30A,
D
Q
gs
gd
nC
nC
Q
11
4-178
CET [ CHINO-EXCEL TECHNOLOGY ]
