CEP62A3/CEB62A3
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
4
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE DIODE CHARACTERISTICS a
Diode Forward Voltage
V
V
SD
V
GS = 0V, Is =26A
1.3
Notes
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
60
50
40
30
60
VGS=10,8,6,4V
50
40
30
-55 C
20
10
VGS=3V
20
25 C
10
0
Tj=125 C
0
1
2
3
4
1
2
4
5
0
3
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1800
2.2
1.9
ID=26A
VGS=10V
1500
1200
900
Ciss
1.6
1.3
Coss
Crss
600
1.0
300
0
0.7
0.4
0
5
10
15
20
25
30
-100
-50
0
50
100
200
150
TJ, Junction Temperature( C)
VDS, Drain-to Source Voltage (V)
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
4-179
CET [ CHINO-EXCEL TECHNOLOGY ]
