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CEP06N5 参数 Datasheet PDF下载

CEP06N5图片预览
型号: CEP06N5
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑电平增强模式场效应晶体管 [N-Channel Logic Level Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 43 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEP06N5/CEB06N5  
ELECTRICAL CHARACTERISTICS (T  
C
=25 C unless otherwise noted)  
4
Typ Max  
Unit  
Parameter  
Condition  
Min  
Symbol  
DYNAMIC CHARACTERISTICSb  
823  
110  
64  
Input Capacitance  
P
F
C
ISS  
OSS  
RSS  
V
DS =25V, VGS = 0V  
P
P
F
F
Output Capacitance  
C
f =1.0MH  
Z
Reverse Transfer Capacitance  
DRAIN-SOURCE DIODE CHARACTERISTICS a  
C
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is =6A  
1.5  
Notes  
ś
ś
a.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
b.Guaranteed by design, not subject to production testing.  
12  
VGS=10,9,8,7V  
10  
10  
1
8
VGS=6V  
150 C  
6
4
VGS=5V  
-55 C  
1.VDS=40V  
2.Pulse Test  
2
25 C  
0.1  
0
2
4
10  
8
6
0
2
4
6
8
10  
12  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
4-19