CEP06N5/CEB06N5
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
C
44
Typ Max
Parameter
Condition
Min
Unit
Symbol
DRAIN-SOURCE AVALANCHE RATINGa
Single Pulse Drain-Source
Avalanche Energy
V
DD =50V, L=24mH
mJ
A
E
AS
500
6
R =25
G
Ω
Maximum Drain-Source
Avalanche Current
I
AS
OFF CHARACTERISTICS
V
GS = 0V,I
D
= 250µA
Drain-Source Breakdown Voltage
500
V
BVDSS
µA
25
I
DSS
GSS
V
DS = 500V, VGS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
=
30V, VDS = 0V
Ć
I
nA
100
Ć
ON CHARACTERISTICSa
V
GS(th)
2
6
4
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
RDS(ON)
0.85
4
Ω
Drain-Source On-State Resistance
1.0
V
GS =10V, I
D
= 4A
V
GS = 10V, VDS = 10V
On-State Drain Current
I
D(ON)
A
S
gFS
Forward Transconductance
V
DS = 50V, I
D
= 4A
SWITCHING CHARACTERISTICSb
Turn-On Delay Time
23
35
t
D(ON)
45
70
ns
ns
V
DD =250V,
= 6A,
I
V
D
Rise Time
t
r
GS = 10V
Turn-Off Delay Time
Fall Time
t
D(OFF)
240
90
ns
ns
nC
162
44
R
GEN=18
Ω
t
f
Q
g
65
54
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =400V, I
D
= 6A,
Q
gs
gd
9
nC
nC
VGS =10V
Q
27
4-18
CET [ CHINO-EXCEL TECHNOLOGY ]
