CEM8206
1.15
1.10
1.05
1.00
1.60
ID=250ӴA
V
DS=VGS
1.40
ID=250ӴA
1.20
1.00
5
0.95
0.80
0.60
0.40
0.90
0.85
-50 -25
0
50
100 125
150
25
75
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
50
30
25
20
10
15
10
1
V
DS=10V
5
0
0.1
0
3
6
9
12
15
1.2
0.4
0.6
0.8
1.0
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
5
it
m
i
L
V
I
DS=4.5V
)
1ms
4
3
2
1
0
RDS(ON
D
=6A
10
10
10
-1
TA=25 C
1
0
Tj=150 C
Single Pulse
-2
10
1
1
0
-1
10
10
10
10
8
0
2
4
6
10 12 14 16
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
5-76
CET [ CHINO-EXCEL TECHNOLOGY ]
