CEM8206
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
Typ C Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
V
GS = 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
20
V
BVDSS
µA
I
DSS
GSS
V
DS = 20V, VGS = 0V
1
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
= 12V, VDS = 0V
Ć
I
100
nA
Ć
ON CHARACTERISTICSb
V
GS(th)
0.5
V
Gate Threshold Voltage
V
DS = VGS, I
D
= 250µA
1.5
20
17
23
mΩ
mΩ
V
V
V
V
GS = 4.5V, I
D
= 6.0A
= 5.2A
Drain-Source On-State Resistance
RDS(ON)
30
GS = 2.5V, I
D
DS = 5V, VGS = 4.5V
On-State Drain Current
I
D(ON)
A
S
10
7
gFS
16
Forward Transconductance
DS =10V, I = 6.0A
D
DYNAMIC CHARACTERISTICSc
950
450
135
Input Capacitance
P
F
C
ISS
V
DS =8V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
t
D(ON)
40
40
ns
ns
20
20
72
20
V
DD = 10V,
= 1A,
I
V
D
Rise Time
t
r
GS = 4.5V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
ns
ns
nC
130
40
Ω
R
GEN = 6
t
f
Q
g
15
20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =10V, I
D
= 6A,
3.4
Q
gs
gd
nC
nC
VGS =4.5V
1.2
Q
5-74
CET [ CHINO-EXCEL TECHNOLOGY ]
