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CEM8206 参数 Datasheet PDF下载

CEM8206图片预览
型号: CEM8206
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 62 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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CEM8206  
ELECTRICAL CHARACTERISTICS (T  
A
=25 C unless otherwise noted)  
TypC Max  
Parameter  
Condition  
Min  
Unit  
Symbol  
DRAIN-SOURCE DIODE CHARACTERISTICS b  
5
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is =1.7A  
1.2  
0.75  
Notes  
ś
a.Surface Mounted on FR4 Board, t 10sec.  
b.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
ś
ś
c.Guaranteed by design, not subject to production testing.  
25  
20  
15  
10  
20  
VGS=4.5,3.5,2.5V  
16  
12  
VGS=2.0V  
8
4
0
5
Tj=125 C  
VGS=1.5V  
2.5  
3.0  
25 C  
-55 C  
0
0.0  
0.5  
1
1.5  
2
2.5  
3
0
0.5  
1.0  
2.0  
1.5  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
1.80  
2400  
2000  
1600  
ID=6.0A  
VGS=4.5V  
1.60  
1.40  
1.20  
1200  
800  
Ciss  
1.00  
Coss  
Crss  
400  
0
0.80  
0.60  
0
2
4
6
8
1
0
12  
0
100  
125 150  
-50 -25  
50  
75  
25  
TJ, Junction Temperature( C)  
VDS, Drain-to Source Voltage (V)  
Figure 4. On-Resistance Variation with  
Temperature  
Figure 3. Capacitance  
5-75