CEM4804
1.15
1.10
1.05
1.00
1.60
1.40
ID=250ӴA
V
DS=VGS
=250ӴA
I
D
1.20
1.00
5
0.95
0.80
0.60
0.40
0.90
0.85
-50 -25
0
50
100 125
150
25
75
-50 -25
0
25 50 75 100 125 150
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
Figure 5. Gate Threshold Variation
with Temperature
50
20
16
10
12
8
4
1.0
0.1
V
DS=10V
0
3
0
6
9
12
1.0
1.4
0.6
0.8
1.2
IDS, Drain-Source Current (A)
VSD, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation
with Drain Current
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
I
DS=15V
=3.5A
t
i
m
D
i
L
8
1ms
S(ON)
1
0
RD
10
10
10
10ms
100ms
1s
10s
DC
6
4
2
-1
T
A
=25 C
Tj=150 C
Single Pulse
-2
10
0
1
1
0
-1
10
10
10
10
0
8
16
32
24
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
Figure 9. Gate Charge
5-101
CET [ CHINO-EXCEL TECHNOLOGY ]
