CEM4804
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
Typ C Max
Parameter
Condition
Min
Unit
Symbol
5
OFF CHARACTERISTICS
V
GS = 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
30
V
BVDSS
µA
I
DSS
GSS
V
DS = 30V, VGS = 0V
1
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS
= 20V, VDS = 0V
Ć
I
100
nA
Ć
ON CHARACTERISTICSb
3
VGS(th)
1
V
Gate Threshold Voltage
VDS = VGS, I
D
= 250µA
16
24
20
30
mΩ
mΩ
V
V
V
V
GS = 10V, I
D
= 6.3A
Drain-Source On-State Resistance
R
DS(ON)
GS = 4.5V, I = 5A
D
DS = 5V, VGS = 10V
10
On-State Drain Current
I
D(ON)
A
S
gFS
7
Forward Transconductance
DS =15V, I = 6A
D
DYNAMIC CHARACTERISTICSc
857
343
105
Input Capacitance
P
F
C
ISS
V
DS =15V, VGS = 0V
P
P
F
F
Output Capacitance
COSS
f =1.0MH
Z
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
t
D(ON)
45
70
ns
ns
22
34
43
18
V
DD = 10V,
= 1A,
I
V
D
Rise Time
t
r
GS = 10V,
Turn-Off Delay Time
Fall Time
t
D(OFF)
ns
ns
nC
90
35
35
Ω
R
GEN = 6
t
f
Q
g
28
4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS =10V, I
D
= 3.5A,
Q
gs
gd
nC
nC
VGS =10V
7.5
Q
5-99
CET [ CHINO-EXCEL TECHNOLOGY ]
