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CEM4804 参数 Datasheet PDF下载

CEM4804图片预览
型号: CEM4804
PDF下载: 下载PDF文件 查看货源
内容描述: 双N沟道增强型场效应晶体管 [Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 55 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
 浏览型号CEM4804的Datasheet PDF文件第1页浏览型号CEM4804的Datasheet PDF文件第2页浏览型号CEM4804的Datasheet PDF文件第4页浏览型号CEM4804的Datasheet PDF文件第5页  
CEM4804  
ELECTRICAL CHARACTERISTICS (T  
A
=25 C unless otherwise noted)  
TypC Max  
Parameter  
Condition  
Min  
Unit  
Symbol  
DRAIN-SOURCE DIODE CHARACTERISTICS b  
5
Diode Forward Voltage  
V
V
SD  
V
GS = 0V, Is =2A  
1.3  
Notes  
ś
a.Surface Mounted on FR4 Board, t 10sec.  
b.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.  
ś
ś
c.Guaranteed by design, not subject to production testing.  
20  
15  
12  
9
VGS=10,8,6,5V  
16  
12  
VGS=4V  
6
8
4
0
25 C  
3
Tj=125 C  
-55 C  
2.5  
VGS=3V  
2.5  
0
1.0  
1.5  
2.0  
3.0  
0
0.5  
1.0  
2.0  
3.0  
1.5  
VDS, Drain-to-Source Voltage (V)  
VGS, Gate-to-Source Voltage (V)  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
1.80  
1200  
1000  
800  
ID=6.3A  
VGS=10V  
1.60  
1.40  
1.20  
Ciss  
600  
Coss  
Crss  
400  
1.00  
200  
0
0.80  
0.60  
0
5
10  
15  
20  
25  
30  
0
100  
125 150  
-50 -25  
50  
75  
25  
TJ, Junction Temperature( C)  
VDS, Drain-to Source Voltage (V)  
Figure 4. On-Resistance Variation with  
Temperature  
Figure 3. Capacitance  
5-100  
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