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NE851M13 参数 Datasheet PDF下载

NE851M13图片预览
型号: NE851M13
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 10 页 / 240 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE851M13  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NOISE FIGURE and ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE and ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
6
5
4
3
18  
6
5
4
3
2
1
0
19  
15  
12  
9
V
CE = 1 V  
V
CE = 2 V  
f = 1 GHz  
f = 1 GHz  
15  
G
a
G
a
12  
9
6
2
1
0
6
NF  
3
3
0
NF  
0
100  
1
10  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
NOISE FIGURE and ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
NOISE FIGURE and ASSOCIATED GAIN  
vs. COLLECTOR CURRENT  
6
5
4
3
18  
6
18  
15  
12  
9
V
CE = 1 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
15  
5
4
3
2
1
0
12  
9
G
a
G
a
6
6
2
1
0
NF  
NF  
3
3
0
0
100  
1
10  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
OUTPUT POWER AND  
COLLECTOR CURRENT vs.  
INPUT POWER  
OUTPUT POWER AND  
COLLECTOR CURRENT vs.  
INPUT POWER  
25  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
80  
70  
60  
50  
40  
30  
20  
10  
0
V
CE = 2 V, f = 1 GHz  
V
CE = 2 V, f = 2 GHz  
Icq = 5 mA (RF OFF)  
Icq = 5 mA (RF OFF)  
20  
15  
10  
5
P
out  
Pout  
0
0
-5  
-5  
IC  
-10  
-10  
I
C
-15  
-20  
-15  
-20  
-15  
-10  
-5  
0
5
10  
-15  
-10  
-5  
0
5
10  
Input Power, PIN (dBm)  
Input Power, PIN (dBm)