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NE851M13 参数 Datasheet PDF下载

NE851M13图片预览
型号: NE851M13
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 10 页 / 240 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE851M13  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG,  
MSG vs. COLLECTOR CURRENT  
20  
15  
10  
5
20  
MSG  
MAG  
MSG  
MAG  
15  
10  
|S21e|2  
2
|S21e  
|
5
0
VCE = 2 V  
V
CE = 1 V  
f = 1 GHz  
f = 1 GHz  
0
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN and MAG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN and MAG  
vs. COLLECTOR CURRENT  
15  
10  
15  
10  
5
V
CE = 1 V  
V
CE = 2 V  
f = 2 GHz  
f = 2 GHz  
MAG  
MAG  
2
2
|S21e  
|
5
|S21e|  
0
0
-5  
-5  
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
INSERTION POWER GAIN, MAG, MSG  
vs. COLLECTOR CURRENT  
10  
5
10  
V
CE = 1 V  
V
CE = 2 V  
f = 4 GHz  
f = 4 GHz  
MAG  
MSG  
MAG  
MSG  
5
0
0
2
2
|S21e|  
|S21e  
|
-5  
-5  
-10  
-10  
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)