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NE851M13 参数 Datasheet PDF下载

NE851M13图片预览
型号: NE851M13
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅晶体管 [NPN SILICON TRANSISTOR]
分类和应用: 晶体晶体管光电二极管放大器
文件页数/大小: 10 页 / 240 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE851M13  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
10  
10  
8
VCE = 2 V  
f = 2 GHz  
V
CE = 1 V  
f = 2 GHz  
8
6
4
2
0
6
4
2
0
1
10  
100  
1
10  
100  
Collector Current, IC (mA)  
Collector Current, IC (mA)  
INSERTION POWER GAIN vs.  
FREQUENCY  
INSERTION POWER GAIN vs.  
FREQUENCY  
35  
30  
25  
20  
15  
10  
35  
30  
25  
20  
15  
10  
5
V
CE = 1 V  
V
CE = 2 V  
I
C = 5 mA  
IC = 5 mA  
5
0
0
0.1  
1
10  
0.1  
1
10  
Frequency, f (GHz)  
Frequency, f (GHz)  
INSERTION POWER GAIN vs.  
FREQUENCY  
INSERTION POWER GAIN vs.  
FREQUENCY  
35  
30  
25  
20  
15  
10  
35  
V
CE = 2 V  
VCE = 1 V  
IC = 15 mA  
I
C = 15 mA  
30  
25  
20  
15  
10  
5
0
5
0
0.1  
1
10  
0.1  
1
10  
Frequency, f (GHz)  
Frequency, f (GHz)