NE67400, NE67483B
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
TYPICAL NOISE PARAMETERS(TA = 25°C)
VDS = 3 V, IDS = 10 mA (NE67483B)
SYMBOLS
PARAMETERS
Drain to Source Voltage
Gate to Drain Voltage
Drain Current
UNITS
RATINGS
FREQ.
(GHz)
NFOPT
(dB)
GA
ΓOPT
VDS
V
5.0
(dB)
MAG
ANG
Rn/50
VGD
V
–6.0
2
3
0.55
0.58
0.60
0.68
0.76
0.85
0.93
1.03
1.15
1.26
1.40
1.55
1.70
1.84
2.04
2.18
2.35
17.0
15.2
14.0
13.2
12.6
12.0
11.5
11.0
10.7
10.3
10.0
9.6
0.81
0.75
0.70
0.67
0.65
0.64
0.64
0.64
0.64
0.64
0.63
0.62
0.60
0.57
0.53
0.46
0.38
37
53
0.57
0.51
0.44
0.37
0.31
0.25
0.19
0.14
0.10
0.06
0.05
0.05
0.08
0.15
0.23
0.34
0.44
IDS
mA
°C
IDSS
4
69
TCH
Channel Temperature
Storage Temperature
175
5
83
TSTG
PT
°C
-65 to +175
6
97
Total Power Dissipation
NE67483B
NE67400
7
111
123
136
148
161
173
-173
-159
-145
-129
-113
-95
mW
mW
270
400
8
9
Note:
10
11
12
13
14
15
16
17
18
1. Operation in excess of any one of these conditions may result in
permanentdamage.
9.2
RECOMMENDED OPERATING
CONDITIONS (TA = 25°C)
9.0
8.6
8.3
SYMBOLS
PARAMETERS
Drain to Source Voltage
Drain Current
UNITS MIN TYP MAX
8.0
VDS
ID
V
3
4
mA
dBm
10
30
15
PIN
Input Power
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION vs.
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
AMBIENTTEMPERATURE
400
VGS = 0 V
40
300
-0.2 V
30
20
10
200
100
-0.4 V
-0.6 V
0
1
2
3
4
5
0
50
100
150
200
Drain to Source Voltage, VDS (V)
Ambient Temperature, TA (°C)
CEL [ CALIFORNIA EASTERN LABS ]
