NEC's L TO Ku BAND LOW NOISE
AMPLIFIER N-CHANNEL GaAS MESFET
FEATURES
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at f = at 12 GHz
Noise Figure, NF (dB)
NE67400
NE67483B
NOISE FIGURE, ASSOCIATED GAIN
vs. FREQUENCY
24
V
DS
= 3 V
I
D
= 10 mA
20
• GATE WIDTH:
W
G
= 280
µm
• GATE LENGTH:
L
G
= 0.3
µm
3.0
G
A
16
2.0
12
DESCRIPTION
NEC's NE674 is a L to Ku Band low noise GaAs MESFET. This
device features a low noise figure with high associated gain,
employing a recessed 0.3 micron gate and triple epitaxial
technology. The active area of the chip is covered with S
i
D
2
and S
i3
N
4
for scratch protection and surface stability. This
device is suitable for both amplifier and oscillator applications.
This device is housed in a solder sealed hermetic, metal
ceramic package for high reliability in space applications.
1.0
8
NF
0
1
2
4
6
8 10
14
20
30
4
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
NF
PARAMETERS AND CONDITIONS
Noise Figure at V
DS
= 3 V, I
D
= 10 mA, f = 4 GHz
f = 12 GHz
Associated Gain at V
DS
= 3 V I
D
= 10 mA, f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz,
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0 V
Gate to Source Cut Off Voltage at V
DS
= 3 V, I
D
= 100
µA
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leakage Current at V
GS
= -5 V
Thermal Resistance (Channel-to-Case)
NE67400
NE67483B
UNITS
dB
dB
dB
dB
MIN
NE67400
NE67483B
TYP
0.6
1.4
14.0
10.0
MAX
1.6
G
A
8.5
P
1dB
dBm
mA
V
mS
µA
°C/W
°C/W
20
-0.5
20
14.5
40
-1.1
50
1.0
120
-3.5
100
10
190
450
I
DSS
V
GS(OFF)
g
m
I
GSO
R
TH (CH-C)
California Eastern Laboratories
Associated Gain, G
A
, (dB)
• HIGH ASSOCIATED GAIN:
G
A
= 10 dB TYP at f = 12 GHz
CEL [ CALIFORNIA EASTERN LABS ]
