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NE661M04 参数 Datasheet PDF下载

NE661M04图片预览
型号: NE661M04
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 10 页 / 190 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE661M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
NOISE FIGURE vs. FREQUENCY  
NOISE FIGURE vs. FREQUENCY  
1.8  
1.6  
1.8  
V
DS = 2 V  
V
DS = 1 V  
I
D = 1 mA  
I
D = 1 mA  
25  
1.6  
25  
G
A
G
A
1.4  
1.2  
20  
15  
1.4  
1.2  
20  
15  
NF  
NF  
1.0  
0.8  
10  
5
1.0  
0.8  
10  
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
Frequency, f (GHz)  
Frequency, f (GHz)  
INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER  
GAIN, MAXIMUM STABLE POWER GAIN vs. FREQUENCY  
NOISE FIGURE vs. FREQUENCY  
1.86  
1.84  
1.82  
1.80  
40  
V
CE = 2 V  
35  
30  
25  
20  
15  
10  
5
IC = 5 mA  
30  
25  
MSG  
G
A
MAG  
1.78  
1.76  
1.74  
20  
15  
10  
5
2
|S21e  
|
NF  
1.72  
V
DS = 2 V  
1.70  
1.68  
0
I
D = 5 mA  
0
0.1  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
1.0  
Frequency, f (GHz)  
10.0  
Frequency, f (GHz)  
INSERTION POWER GAIN, MAXIMUM AVAILABLE POWER  
GAIN, MAXIMUM STABLE POWER GAIN vs.  
COLLECTOR CURRENT  
OUTPUT, COLLECTOR CURRENT vs.  
INPUT POWER  
10  
5
25  
20  
15  
10  
5
30  
f = 2 GHz  
f = 2 GHz  
P
out  
VCE = 2 V  
V
CE = 2 V  
25  
20  
15  
10  
5
MAG  
MSG  
0
2
|S21e  
|
–5  
–10  
–15  
I
C
0
0
–30  
–25  
–20  
–15  
–10  
–5  
1
10  
Collector Current, IC (mA)  
100  
Input Power, Pin (dBm)