NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
•
HIGH GAIN BANDWIDTH:
f
T
= 25 GHz
HIGH POWER GAIN:
IS
21E
I
2
= 17 dB TYP at 2 GHz
LOW NOISE FIGURE:
NF = 1.2 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN:
22 dB @ 2 GHz
NEW LOW PROFILE M04 PACKAGE:
SOT-343 footprint, with a height of just 0.59 mm.
Flat Lead Style for better RF performance.
M04
NE661M04
DESCRIPTION
NEC's NE661M04 is fabricated using NEC's UHS0 25 GHz f
T
wafer process. With a typical transition frequency of 25 GHz
the NE661M04 is usable in applications from 100 MHz to 10
GHz. The NE661M04 provides excellent low voltage/low cur-
rent performance.
NEC's new low profile/flat lead style "M04" package is ideal for
today's portable wireless applications. The NE661M04 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
EIAJ
1
REGISTERED
SYMBOLS
I
CBO
PART NUMBER
NUMBER
PACKAGE OUTLINE
UNITS
µA
µA
50
GHz
dB
dB
dB
dBm
dBm
pF
14
20
70
25
22
17
1.2
5
15
0.08
0.12
1.5
MIN
NE661M04
2SC5507
M04
TYP
MAX
0.1
0.1
100
PARAMETERS AND CONDITIONS
Collector Cutoff Current at V
CE
= 5 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain
2
at V
CE
= 2 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz
Maximum Stable Gain
4
at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Insertion Power Gain at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Noise Figure at V
CE
= 2 V, I
C
= 2 mA, f = 2 GHz, Z
IN
= Z
OPT
Output Power at 1 dB compression point at
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Third Order Intercept Point at V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz
Feedback Capacitance
3
at V
CB
= 2 V, I
C
= 0, f = 1 MHz
DC
I
EBO
h
FE
f
T
MSG
|S
21E
|
2
NF
P1dB
IP
3
Cre
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
≤
350
µs,
duty cycle
≤
2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG = S
21
S
12
RF
California Eastern Laboratories
CEL [ CALIFORNIA EASTERN LABS ]
