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NE661M04 参数 Datasheet PDF下载

NE661M04图片预览
型号: NE661M04
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅高频三极管 [NPN SILICON HIGH FREQUENCY TRANSISTOR]
分类和应用:
文件页数/大小: 10 页 / 190 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE661M04  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
COLLECTOR CURRENT  
vs. DC BASE VOLTAGE  
DC POWER DERATING CURVES  
100  
50  
40  
30  
20  
10  
VCE = 2 V  
75  
Device Mounted  
on a Ceramic  
PCB  
50  
25  
Free Air  
0
50  
100 117 134 150  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Ambient Temperature, TA (°C)  
DC Base Voltage, VBE (V)  
COLLECTOR CURRENT vs.  
COLLECTOR TO EMITTER VOLTAGE  
FORWARD CURRENT GAIN  
vs. COLLECTOR GAIN  
10  
8
100  
80  
60  
40  
20  
140 µA  
120 µA  
100 µA  
80 µA  
6
60 µA  
40 µA  
20 µA  
4
2
IB = 5 µA  
0
2
4
6
8
10  
0
1.0  
2.0  
3.0  
Collector Current, IC (mA)  
Collector to Emitter Voltage, VCE (V)  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR BASE VOLTAGE  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
30  
V
CE = 3 V  
f = 1 MHz  
f = 2 GHz  
25  
20  
15  
10  
5
0
0
1.0  
2.0  
3.0  
4.0  
5.0  
1
10  
Collector Current, IC (mA)  
100  
Collector to Base Voltage, VCB (V)