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NE6500379A 参数 Datasheet PDF下载

NE6500379A图片预览
型号: NE6500379A
PDF下载: 下载PDF文件 查看货源
内容描述: 3W , L / S波段中功率的GaAs MESFET [3W, L/S-BAND MEDIUM POWER GaAs MESFET]
分类和应用: 晶体射频场效应晶体管
文件页数/大小: 7 页 / 162 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE6500379A  
ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C)  
RECOMMENDED OPERATING LIMITS  
SYMBOLS  
PARAMETERS  
UNITS  
TYP  
MAX  
SYMBOLS  
PARAMETERS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current  
UNITS  
RATINGS  
VDS  
Drain to Source Voltage  
Channel Temperature  
Gain Compression  
V
6.0  
6.0  
VDS  
V
15  
-7.0  
TCH  
°C  
125  
3.0  
VGS  
V
GCOMP  
dB  
IDS  
A
5.6  
IGS  
Gate Current  
mA  
W
50  
PT  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
21  
TCH  
°C  
°C  
150  
TSTG  
-65 to +150  
ORDERING INFORMATION  
Note:  
PART NUMBER  
QTY  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
NE6500379A-T1  
NE6500379A  
1 K/Reel  
Bulk, 50 piece min.  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
DRAIN CURRENT vs.  
DRAIN VOLTAGE  
CASE TEMPERATURE  
25  
5
4
22 W  
20  
V
GS =  
0 V  
3
2
15  
-0.50 V  
RTH = 6 °C/W  
-1.0 V  
-1.5 V  
10  
5
0
1
-2.0 V  
0
18 °C  
5
6
1
2
0
3
4
0
50  
100  
150  
Case Temperature, TC (°C)  
Drain Voltage, VD (V)  
MAXIMUM AVAILABLE GAIN vs.  
FREQUENCY  
TRANSCONDUCTANCE AND DRAIN  
CURRENT vs. GATE VOLTAGE  
2.00  
1.00  
25.0  
0.8  
0.6  
3 V  
300 mA  
20.0  
8 V  
500 mA  
15.0  
10.0  
5.0  
1.00  
6 V  
500 mA  
0.4  
0.5  
0.2  
0.00  
0.00  
-3.50  
-1.50  
0.1  
0.2  
0.4  
0.6  
1.0  
2.0  
4.0  
Gate Voltage, VG (V)  
Frequency, f (GHz)