NEC'
S
3W, L/S-BAND
NE6500379A
MEDIUM POWER GaAs MESFET
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
Available on Tape and Reel
• USABLE TO 2.7 GHz:
Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
PCS
5.7 MAX
0.6 – 0.15
4.2 MAX
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 – 0.2
Source
Source
Gate
Drain
0.8 – 0.15
4.4 MAX
E
• HIGH LINEAR GAIN:
10 dB TYP at 1.9 GHz
• LOW THERMAL RESISTANCE:
5 C/W
T
9
0.4 – 0.15
5.7 MAX
1.0 MAX
0.8 MAX
3.6 – 0.2
0.2 – 0.1
DESCRIPTION
NEC's NE6500379A is a 3 W GaAs MESFET designed for
medium power Fixed Wireless Access, ISM, WLL, PCS, IMT-
2000, and return path MMDS transmitter applications. It is
capable of delivering 3 Watts of output power with high linear
gain, high efficiency and excellent linearity. Reliability and
performance uniformity are assured by NEC's stringent qual-
ity and control procedures
Note: Unless otherwise specified, tolerance is
±0.2
mm
ELECTRICAL CHARACTERISTICS
(T
C
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
Power Out at 1dB Gain Compression
Linear Gain
1
Power Added Efficiency
Drain Current
Saturated Drain Current
Pinch-Off Voltage
Thermal Resistance
Gate-to-Drain Breakdown Voltage
= 25°C)
NE6500379A
79A
UNITS
dBm
dB
%
A
A
V
°C/W
V
17
-3.6
9.0
MIN
TYP
35.0
10.0
50
1.0
4.5
-2.6
5
-1.6
6
V
DS
= 2.5 V; V
GS
= 0 V
V
DS
= 2.5 V; I
DS
= 21 mA
Channel to Case
I
GD
= 21 mA
f = 1.9 GHz, V
DS
= 6.0 V
Rg = 30
Ω
I
DSQ
= 500 mA (RF OFF)
2
MAX
TEST CONDITIONS
Functional
Characteristics
P
1dB
G
L
η
ADD
I
D
Electrical DC
Characteristics
I
DSS
V
P
R
TH
BV
GD
Notes:
1. Pin = 0 dBm
2. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
0.9 – 0.2
BOTTOM VIEW
California Eastern Laboratories
1.2
MAX
• HIGH OUTPUT POWER:
35 dBm TYP
X
Gate
Drain
CEL [ CALIFORNIA EASTERN LABS ]
