A Business Partner of Renesas Electronics Corporation.
NE5550279A
RECOMMENDED OPERATING RANGE (TA = 25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Symbol
VDS
Test Conditions
MIN.
−
TYP.
7.5
MAX.
9.0
2.85
−
Unit
V
VGS
1.65
−
2.20
0.4
V
IDS
A
Input Power
Pin
f = 460 MHz, VDS = 7.5 V
−
15
20
dBm
ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
Parameter
DC Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leakage Current
Drain to Source Leakage Current
(Zero Gate Voltage Drain Current)
Gate Threshold Voltage
Drain to Source Breakdown Voltage
Transconductance
IGSS
IDSS
VGS = 6.0 V
−
−
−
−
100
10
nA
VDS = 25 V
μA
Vth
BVDSS
Gm
VDS = 7.5 V, IDS = 1.0 mA
IDS = 10 μA
1.15
25
1.65
38
2.25
−
V
V
VDS = 7.5 V, IDS = 140±20 mA
Channel to Case
0.36
−
0.44
20.0
0.58
−
S
<R>
Thermal Resistance
Rth
°C/W
RF Characteristics
Output Power
Pout
IDS
f = 460 MHz, VDS = 7.5 V,
Pin = 15 dBm,
31.5
33.0
0.38
70
−
−
−
−
−
dBm
A
Drain Current
−
−
−
−
Power Drain Efficiency
Power Added Efficiency
Linear Gain
ηd
IDset = 40 mA (RF OFF)
%
ηadd
68
%
Note
GL
22.5
dB
Note: Pin = 0 dBm
Remark DC performance is 100% testing. RF performance is testing several samples per wafer.
Wafer rejection criteria for standard devices is 1 reject for several samples.
R09DS0033EJ0200 Rev.2.00
Jul 04, 2012
Page 2 of 7
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