NE552R479A
TYPICAL PERFORMANCE CURVES (TA = 25°C)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
1250
1250
1000
750
500
250
0
30
25
20
15
10
5
30
25
20
15
10
5
Frequency = 2.45 GHz
ds = 3.0 V
dq = 100 mA
Frequency = 2.45 GHz
Vds = 3.0 V
V
I
Pin = 19 dBm
P
out
1000
750
500
250
0
100
75
100
75
P
out
η
d
η
d
ηadd
50
25
0
50
25
0
ηadd
I
ds
Ids
3
15
0
1
2
4
0
5
10
20
25
Input Power,Pin (dBm)
Gate to Source Voltage, Vgs (V)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
IMD vs. TWO TONE OUTPUT POWER
1250
1000
750
500
250
0
30
25
20
15
10
5
-10
-20
-30
-40
-50
Frequency = 2.45 GHz
ds = 3.0 V
dq = 200 mA
Frequency = 2.45 GHz
∆ Frequency = 1 MHz
V
I
P
out
V
ds = 3.0 V
Idq = 200 mA
100
75
IM3
IM5
η
d
50
25
0
ηadd
Ids
-60
-70
15
0
5
10
20
25
20
5
10
15
25
30
Input Power,Pin (dBm)
Average Two Tone Output Power, Pout (dBm)
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. GATE TO SOURCE VOLTAGE
OUTPUT POWER, DRAIN CURRENT
EFFICIENCY vs. INPUT POWER
1250
1000
750
500
250
0
1250
1000
750
500
250
0
30
25
20
15
10
5
30
25
20
15
10
5
Frequency = 2.0 GHz
Frequency = 2.0 GHz
ds = 3.0 V
dq = 150 mA
V
P
ds = 3.0 V
in = 19 dBm
V
P
out
P
out
I
100
75
100
75
ηd
η
d
ηadd
ηadd
50
25
0
50
25
0
Ids
Ids
3
15
1
2
4
0
0
5
10
20
25
Gate to Source Voltage, Vgs (V)
Input Power,Pin (dBm)
CEL [ CALIFORNIA EASTERN LABS ]
