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NE552R479A-T1A-A 参数 Datasheet PDF下载

NE552R479A-T1A-A图片预览
型号: NE552R479A-T1A-A
PDF下载: 下载PDF文件 查看货源
内容描述: NEC的3.0 V, 0.25 W L & S波段中功率硅LD- MOSFET [NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET]
分类和应用: 晶体晶体管放大器
文件页数/大小: 9 页 / 497 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE552R479A  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)  
RECOMMENDED OPERATING LIMITS  
SYMBOLS  
PARAMETERS  
UNITS TYP  
MAX  
SYMBOLS  
PARAMETERS  
Drain Supply Voltage  
Gate Supply Voltage  
Drain Current  
UNITS  
RATINGS  
VDS  
Drain to Source Voltage  
Gate Supply Voltage  
V
V
3.0  
2.0  
200  
19  
6.0  
VDS  
V
15.0  
VGS  
3.0  
VGS  
V
5.0  
1
IDS  
Drain Current  
mA  
dBm  
500  
25  
IDS  
mA  
mA  
W
300  
2
IDS  
Drain Current (Pulse Test)2  
Total Power Dissipation  
Channel Temperature  
Storage Temperature  
600  
PIN  
Input Power  
Notes:  
PT  
10  
1. Duty cycle 50%, Ton ≤ 1 s.  
2. f = 2.45 GHz, VDS = 3.0 V.  
TCH  
°C  
125  
TSTG  
°C  
-55 to +125  
Notes:  
1. Operation in excess of any one of these parameters may result  
in permanent damage.  
2. Duty cycle 50%, Ton ≤ 1 s.  
LARGE SIGNAL IMPEDANCE  
(VDS = 3.0 V, ID = 200 mA, f = 2.45 GHz, Pout = 400 mW)  
FREQUENCY (GHz)  
Zin (Ω)  
ZOL (Ω)1  
2.45  
2.96 j7.78  
3.36 j8.42  
Note:  
ORDERING INFORMATION  
1. ZOL is the conjugate of optimum load impedance at given  
voltage, idling current, input power and frequency.  
PART NUMBER  
QTY  
NE552R479A-T1A-A • 12 mm wide embossed taping.  
• Gate pin faces the perforation side of  
the tape.  
• 5 kpcs/Reel  
TYPICAL PERFORMANCE CURVES (TA = 25°C)  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
DRAIN CURRENT vs.  
DRAIN VOLTAGE  
25  
1.0  
Gate Voltage (V) 3.75  
3.50  
20  
15  
0.8  
3.25  
0.6  
3.00  
2.75  
RTH = 10°C/W  
0.4  
10  
2.50  
2.25  
0.2  
5
0
2.20  
1.75  
0.0  
0
25  
50  
75  
100  
125  
150  
0.00  
2.0  
4.0  
6.0  
8.0  
10.0  
Case Temperature, TC (°C)  
Drain Voltage, VD (V)