NE552R479A-T1A-A 参数 Datasheet PDF下载

NEC's 3.0 V, 0.25 W L&S-BAND NE552R479A

MEDIUM POWER SILICON LD-MOSFET

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

• HIGH OUTPUT POWER:

+26 dBm TYP at V

DS

= 3.0 V

• HIGH LINEAR GAIN:

11 dB TYP @ 2.45 GHz

• SINGLE SUPPLY:

2.8 to 6 V

• SURFACE MOUNT PACKAGE:

5.7

x

5.7

x

1.1 mm MAX

5.7 MAX.

0.6±0.15

4.2 MAX.

OUTLINE DIMENSIONS

(Units in mm)

PACKAGE OUTLINE 79A

(Bottom View)

1.5±0.2

Source

Source

W

0X001

Gate

Drain

4.4 MAX.

0.8±0.15

1.0 MAX.

Gate

Drain

1.2 MAX.

A

0.4±0.15

5.7 MAX.

0.2±0.1

0.8 MAX.

3.6±0.2

DESCRIPTION

NEC's NE552R479A is an N-Channel silicon power laterally

diffused MOSFET specially designed as the transmission

power amplifier for mobile and fixed wireless applications.

Die are manufactured using NEC's NEWMOS2 technology

(NEC's 0.6

μm

WSi gate lateral MOSFET) and housed in a

surface mount package.

APPLICATIONS

• DIGITAL CELLULAR PHONES:

3.0 V GSM1900 Pre Driver

• ANALOG CELLULAR PHONES:

2.4 V AMPS Handsets

• OTHERS:

W-LAN

Short Range Wireless

Retail Business Radio

Special Mobile Radio

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C)

PART NUMBER

PACKAGE OUTLINE

Functional

Characteristics

SYMBOLS

P

OUT

G

L

CHARACTERISTICS

Output Power

Linear Gain

Power Added Efficiency

Drain Current

Gate-to-Source Leakage Current

Saturated Drain Current

(Zero Gate Voltage Drain Voltage)

Gate Threshold Voltage

Transconductance

Drain-to-Source Breakdown Voltage

Thermal Resistance

UNITS

dBm

dB

%

A

nA

nA

V

S

V

°C/W

15

1

1.4

0.4

18

10

35

MIN

24.0

NE552R479A

79A

TYP

26.0

11.0

45

230

100

100

1.9

MAX

TEST CONDITIONS

f = 2.45 GHz, V

DS

= 3.0 V,

I

DSQ

= 200 mA (RF OFF)

P

in

= 19 dBm, except

Pin = 10 dBm for linear gain

V

GS

= 5.0 V

V

DS

= 6.0 V

V

DS

= 3.5 V, I

DS

=

1 mA

V

DS

= 3.5 V, I

DS

=

100 mA

I

DSS

= 10

μA

Channel-to-Case

η

ADD

I

D

I

GSS

I

DSS

V

TH

g

m

BV

DSS

R

TH

Notes:

1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1

reject for several samples.

Electrical DC

Characteristics

0.9±0.2

California Eastern Laboratories