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NE3505M04-T2 参数 Datasheet PDF下载

NE3505M04-T2图片预览
型号: NE3505M04-T2
PDF下载: 下载PDF文件 查看货源
内容描述: [HETERO JUNCTION FIELD EFFECT TRANSISITOR]
分类和应用:
文件页数/大小: 20 页 / 335 K
品牌: CEL [ CALIFORNIA EASTERN LABS ]
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NE3505M04  
RECOMMENDED OPERATING CONDITIONS(TA = +25 °C)  
PARAMETER  
Drain to Source Voltage  
Drain Current  
SYMBOL  
MIN.  
TYP.  
MAX.  
2.5  
UNIT  
VDS  
---  
2
V
ID  
---  
15  
25  
mA  
dBm  
Input Power  
Pin  
---  
---  
0
ELECTRICAL CHARACTERISTICS (TA = +25 °C)  
PARAMETER  
SYMBOL TEST CONDITIONS MIN.  
TYP.  
MAX.  
10  
UNIT  
uA  
Gate to Source Leak Current  
Saturated Drain Current  
IGSO  
IDSS  
VGS(off)  
gm  
VGS=-3V  
---  
50  
0.5  
---  
VDS=2V, VGS=0V  
VDS=2V, ID=100µA  
VDS=2V, ID=15mA  
120  
-1.5  
---  
mA  
V
Gate to Source Cutoff Voltage  
-0.35  
70  
---  
Trans conductance  
Noise Figure  
---  
mS  
dB  
NF  
---  
0.4  
15.5  
0.6  
---  
VDS=2V, ID=15mA  
f4GHz  
Associated Gain  
Ga  
14  
dB  
The information in this document is subject to change without notice.  
DATA SHEET