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28LV64 参数 Datasheet PDF下载

28LV64图片预览
型号: 28LV64
PDF下载: 下载PDF文件 查看货源
内容描述: 64K位CMOS并行EEPROM [64K-Bit CMOS PARALLEL EEPROM]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 12 页 / 528 K
品牌: CATALYST [ CATALYST SEMICONDUCTOR ]
 浏览型号28LV64的Datasheet PDF文件第1页浏览型号28LV64的Datasheet PDF文件第2页浏览型号28LV64的Datasheet PDF文件第3页浏览型号28LV64的Datasheet PDF文件第4页浏览型号28LV64的Datasheet PDF文件第6页浏览型号28LV64的Datasheet PDF文件第7页浏览型号28LV64的Datasheet PDF文件第8页浏览型号28LV64的Datasheet PDF文件第9页  
CAT28LV64  
(4)  
Figure 1. A.C. Testing Input/Output Waveform  
V
- 0.3 V  
CC  
2.0 V  
0.6 V  
INPUT PULSE LEVELS  
REFERENCE POINTS  
0.0 V  
Figure 2. A.C. Testing Load Circuit (example)  
Vcc  
1.8 K  
DEVICE  
UNDER  
TEST  
OUTPUT  
1. 3K  
C = 100 pF  
L
C INCLUDES JIG CAPACITANCE  
L
A.C. CHARACTERISTICS, Write Cycle  
= 3.0V to 3.6V, unless otherwise specified.  
V
cc  
28LV64-15  
Min Max  
28LV64-20  
Min Max  
28LV64-25  
Symbol  
Parameter  
Min  
Max  
Units  
ms  
ns  
tWC  
tAS  
tAH  
tCS  
tCH  
Write Cycle Time  
Address Setup Time0  
Address Hold Time  
CE Setup Time  
CE Hold Time  
5
5
5
0
100  
0
0
100  
0
0
100  
0
ns  
ns  
0
0
0
ns  
(2)  
tCW  
tOES  
tOEH  
CE Pulse Time  
OE Setup Time  
OE Hold Time  
110  
0
150  
10  
10  
150  
100  
0
150  
10  
10  
150  
100  
0
ns  
ns  
0
ns  
(2)  
tWP  
tDS  
tDH  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
110  
60  
0
ns  
ns  
ns  
(1)  
tINIT  
Write Inhibit Period  
After Power-up  
5
10  
5
10  
5
10  
ms  
(1)(3)  
tBLC  
Byte Load Cycle Time  
0.05  
100  
0.1  
100  
0.1  
100  
µs  
Note:  
(1) This parameter is tested initially and after a design or process change that affects the parameter.  
(2) A write pulse of less than 20ns duration will not initiate a write cycle.  
(3) A timer of duration t  
max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;  
BLC  
however a transition from HIGH to LOW within t  
max. stops the timer.  
BLC  
(4) Input rise and fall times (10% and 90%) < 10 ns.  
Doc. No. 1010, Rev. D  
5