BSI
BS616LV2025
DC ELECTRICAL CHARACTERISTICS (TA = 0oC to +70oC)
PARAMETER
(1)
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX.
UNITS
NAME
Guaranteed Input Low
Voltage(2)
Guaranteed Input High
Voltage(2)
Vcc=5.0V
Vcc=5.0V
IL
V
-0.5
2.2
--
--
--
--
0.8
V
V
Vcc+0.2
IH
V
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
I IL
1
1
uA
Vcc = Max, CE1 = VIHor CE2=VILor OE = VIH
I/O = 0V to Vcc
,
Output Leakage Current
LO
I
--
--
uA
V
Vcc=5.0V
Vcc=5.0V
Output Low Voltage
Output High Voltage
Vcc = Max, IOL= 2mA
VOL
--
--
--
0.4
--
V
V
OH
Vcc = Min, I = -1mA
OH
V
2.4
Operating Power Supply Vcc = Max, CE1= VIL, CE2=VIH
Vcc=5.0V
Vcc=5.0V
I CC
--
--
--
--
40
1
mA
mA
(3)
DQ
Current
I
= 0mA, F =Fmax
Vcc = Max, CE1 = VIH or CE2=VIL
Standby Current-TTL
I CCSB
DQ
I
= 0mA
≧
Vcc = Max, CE1 Vcc-0.2V or
CE2≦0.2V,
Vcc=5.0V
Standby Current-CMOS
I CCSB1
--
0.6
6
uA
Other inputs Vcc - 0.2V or
≧
IN
V ≦0.2V
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/tRC
.
Revision 2.5
R0201-BS616LV2025
4
Jan.
2004
BSI [ BRILLIANCE SEMICONDUCTOR ]
