BSI
BS616LV2025
TRUTH TABLE
MODE
CE1 CE2
OE
WE
CIO
LB
UB
SAE
D0~7
D8~15
VCC Current
H
X
X
L
X
X
X
X
Fully Standby
Output Disable
X
H
X
H
X
X
X
X
High-Z
High-Z
High-Z
High-Z
ICCSB, ICCSB1
L
H
X
X
ICC
L
H
L
H
L
L
Dout
High-Z
Dout
High-Z
Dout
Read from SRAM
( WORD mode )
L
H
L
X
H
L
H
H
X
X
ICC
Dout
L
H
Din
X
Write to SRAM
( WORD mode )
L
H
ICC
H
L
L
L
X
Din
Din
Din
Read from SRAM
( BYTE Mode )
Write to SRAM
( BYTE Mode )
L
L
H
H
L
X
H
L
L
L
X
X
X
X
A-1
A-1
Dout
Din
High-Z
X
ICC
ICC
ABSOLUTE MAXIMUM RATINGS(1)
OPERATING RANGE
SYMBOL
PARAMETER
Terminal Voltage with
Respect to GND
RATING
-0.5 to
Vcc+0.5
UNITS
AMBIENT
TEMPERATURE
0 O C to +70 O
RANGE
Vcc
V
TERM
V
Commercial
Industrial
C
4.5V ~ 5.5V
4.5V ~ 5.5V
Temperature Under Bias
Storage Temperature
Power Dissipation
-40 to +125
-60 to +150
1.0
O C
O C
W
BIAS
STG
T
T
T
P
-40 O C to +85 O
C
CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)
DC Output Current
20
mA
OUT
I
SYMBOL
PARAMETER CONDITIONS MAX.
UNIT
Input
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
reliability.
CIN
VIN=0V
=0V
6
8
pF
Capacitance
Input/Output
Capacitance
DQ
I/O
C
V
pF
1. This parameter is guaranteed and not 100% tested.
Revision 2.5
Jan. 2004
R0201-BS616LV2025
3
BSI [ BRILLIANCE SEMICONDUCTOR ]
